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Milliwatt-Power AlGaN Deep-UV Light-Emitting Diodes at 254 nm Emission as a Clean Alternative to Mercury Deep-UV Lamps


The influences of relatively low Mg concentration in a p-AlGaN hole source layer (HSL) and relatively high growth temperature on donor–acceptor pair (DAP) emission from AlGaN deep-UV (DUV) light-emitting diodes (LEDs) at 254 nm emission are investigated. Consequently, the DAP emissions are suppressed. The maximum power and external quantum efficiency (EQE) of 3.4 mW and 1.2%, respectively, are reported

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