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Journal of Materials Chemistry C online version “Polarization-Dependent Hole Generation in 222 nm-Band AlGaN-based Far-UVC LED: A Way Forward to the Epi-Growers of MBE and MOCVD”

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Far-ultraviolet-C (Far-UVC) light-emitting-diodes (LEDs) offer a promising technology for the disinfection of surface, air, water, food and airborne disease transmission in occupied spaces, including COVID-19 (SARS-CoV-2) and other viral diseases, when it is meticulously designed, engineered, and applied. However, the key issue of hole concentration inside the multi-quantum-wells (MQWs) of AlGaN-based Far-UVC LEDs with high Al-contents is quite critical. Therefore, theoretical studies of AlGaN-based Far-UVC LEDs may suggest sufficient evidence for immediate consideration and implementation for the epitaxial growth of 222 nm-band Far-UVC LED technology during this world-wide health crisis.

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